B.E./B.Tech. DEGREE EXAMINATION, JUNE 2010
Second Semester
Computer Science and Engineering
EC2151- ELECTRIC CIRCUITS AND ELECTRON DEVICES
(Regulation 2008)
(Common to Biomedical Engineering, Electronics and Communication Engineering and Information Technology)
Time: Three hours Maximum: 100 Marks
Answer ALL Questions
PART A- (10 X 2 = 20 Marks)
1. State Kirchoff's current law and voltage law.
2. State Superposition theorem.
3. What is quality factor?
4. Find the resonant frequency in the ideal parallel LC circuit shown in figure.
5. Give the expression for transition capacitance and diffusion capacitance of a PN diode.
6. Define avalanche breakdown.
7. What is "Early effect" in CB configuration and give its consequences?
8. Distinguish clearly the difference between N with P channel FETs.
9. Give some applications of tunnel diode.
10. What is meant by photovoltaic cell?
PART B- (5 X16 = 80 Marks)
11. (a) (i) State Thevenin's and superposition theorems, mention one application. (8 Marks)
(ii) Find the Thevenin's equivalent of the circuit shown in figure. (8 Marks)
(Or)
(b) (i) Consider the circuit in figure. (12 Marks)
(1) If Rout = 3Kohm, find the power delivered to it.
(2) What is the maximum power that can be delivered to any Rout?
(3) What two different values of Rout will have exactly 20mw delivered to them?
(ii) State maximum power transfer theorem. (4 Marks)
12. (a) In the circuit shown in figure, determine the complete solution for the current when the switch is closed at t =0. Applied voltage is v(t) = 400cos(500t + ^/4), resistance R = 15ohm, inductance L = 0.2H and capacitance C = 3 Uf. (16 Marks)
(Or)
(b) (i) Explain (using the relevant circuit) the double tuned circuit and derive the expression for A and Mc. (10 Marks)
(ii) The tuned frequency of a double tuned circuit shown in fig. is 10^4 rad/sec. If the source voltage is 2v and has a resistance of 0.1 ohm, calculate the maximum output voltage at resonance if R1= 0.01 ohm, L1= 2UH, R2 = 0.1 ohm and L2 = 25UH. (6 Marks)
13. (a) (i) Derive the PN diode current equation. (8 Marks)
(ii) Explain how the depletion region at a p-n junction is formed and explain with relevant sketches for charge density, electric field intensity and potential energy barriers at the junction. (8 Marks)
(Or)
(b) (i) Draw the Zener diode characteristics and explain the working o Zener diode. (8 Marks)
(ii) Draw the Zener regulation circuit and explain its function for input and output regulation. (8 Marks)
14. (a) Explain the input and output characteristics of a common emitter configuration with a neat sketch. (16 Marks)
(Or)
(b) What is MOSFET? Explain the construction and working principle of enhancement mode and depletion mode MOSFET with a neat diagram. (16 Marks)
15. (a) What is tunneling phenomenon? Describe the V-I characteristics and concepts of tunnel diode with application. (16 Marks)
(Or)
(b) Explain the negative resistance characteristics of Unijunction Transistor with neat sketch. (16 Marks)
KEYWORDS:2010 ANNA UNIVERSITY CHENNAI B.E COMPUTER SCIENCE AND ENGINEERING B.E./B.TECH DEGREE EXAMINATION, JUNE 2010, EC2151- ELECTRIC CIRCUITS AND ELECTRON DEVICES,ANNA UNIVERSITY QUESTION PAPER,ANNA UNIVERSITY,ANNA UNIVERSITY CHENNAI,ANNA UNIVERSITY COIMBATORE,ANNA UNIVERSITY TRICHY,ANNA UNIVERSITY TIRUNELVELI,ANNA UNIVERSITY MADURAI,ANNA UNIVERSITY SYLLABUS,ANNA-UNIVERSITY RESULTS,ANNA UNIVERSITY DISTANCE EDUCATION,ANNA UNIVERSITY MBA-CENTRE FOR DISTANCE EDUCATION,ANNA UNIVERSITY SCHEDULE OF EXAMINATIONS,ANNA UNIVERSITY ADMISSION,ANNA UNIVERSITY COURSES,ANNA UNIVERSITY ACADEMIC,ANNA UNIVERSITY DEPARTMENTS,ANNA UNIVERSITY RESEARCH,ANNA UNIVERSITY MAIL,ANNA UNIVERSITY QUESTION PAPERS,ANNA UNIVERSITY COUNSELLING DATES,ANNA UNIVERSITY RE-EVALUATION RESULTS
Second Semester
Computer Science and Engineering
EC2151- ELECTRIC CIRCUITS AND ELECTRON DEVICES
(Regulation 2008)
(Common to Biomedical Engineering, Electronics and Communication Engineering and Information Technology)
Time: Three hours Maximum: 100 Marks
Answer ALL Questions
PART A- (10 X 2 = 20 Marks)
1. State Kirchoff's current law and voltage law.
2. State Superposition theorem.
3. What is quality factor?
4. Find the resonant frequency in the ideal parallel LC circuit shown in figure.
5. Give the expression for transition capacitance and diffusion capacitance of a PN diode.
6. Define avalanche breakdown.
7. What is "Early effect" in CB configuration and give its consequences?
8. Distinguish clearly the difference between N with P channel FETs.
9. Give some applications of tunnel diode.
10. What is meant by photovoltaic cell?
PART B- (5 X16 = 80 Marks)
11. (a) (i) State Thevenin's and superposition theorems, mention one application. (8 Marks)
(ii) Find the Thevenin's equivalent of the circuit shown in figure. (8 Marks)
(Or)
(b) (i) Consider the circuit in figure. (12 Marks)
(1) If Rout = 3Kohm, find the power delivered to it.
(2) What is the maximum power that can be delivered to any Rout?
(3) What two different values of Rout will have exactly 20mw delivered to them?
(ii) State maximum power transfer theorem. (4 Marks)
12. (a) In the circuit shown in figure, determine the complete solution for the current when the switch is closed at t =0. Applied voltage is v(t) = 400cos(500t + ^/4), resistance R = 15ohm, inductance L = 0.2H and capacitance C = 3 Uf. (16 Marks)
(Or)
(b) (i) Explain (using the relevant circuit) the double tuned circuit and derive the expression for A and Mc. (10 Marks)
(ii) The tuned frequency of a double tuned circuit shown in fig. is 10^4 rad/sec. If the source voltage is 2v and has a resistance of 0.1 ohm, calculate the maximum output voltage at resonance if R1= 0.01 ohm, L1= 2UH, R2 = 0.1 ohm and L2 = 25UH. (6 Marks)
13. (a) (i) Derive the PN diode current equation. (8 Marks)
(ii) Explain how the depletion region at a p-n junction is formed and explain with relevant sketches for charge density, electric field intensity and potential energy barriers at the junction. (8 Marks)
(Or)
(b) (i) Draw the Zener diode characteristics and explain the working o Zener diode. (8 Marks)
(ii) Draw the Zener regulation circuit and explain its function for input and output regulation. (8 Marks)
14. (a) Explain the input and output characteristics of a common emitter configuration with a neat sketch. (16 Marks)
(Or)
(b) What is MOSFET? Explain the construction and working principle of enhancement mode and depletion mode MOSFET with a neat diagram. (16 Marks)
15. (a) What is tunneling phenomenon? Describe the V-I characteristics and concepts of tunnel diode with application. (16 Marks)
(Or)
(b) Explain the negative resistance characteristics of Unijunction Transistor with neat sketch. (16 Marks)
KEYWORDS:2010 ANNA UNIVERSITY CHENNAI B.E COMPUTER SCIENCE AND ENGINEERING B.E./B.TECH DEGREE EXAMINATION, JUNE 2010, EC2151- ELECTRIC CIRCUITS AND ELECTRON DEVICES,ANNA UNIVERSITY QUESTION PAPER,ANNA UNIVERSITY,ANNA UNIVERSITY CHENNAI,ANNA UNIVERSITY COIMBATORE,ANNA UNIVERSITY TRICHY,ANNA UNIVERSITY TIRUNELVELI,ANNA UNIVERSITY MADURAI,ANNA UNIVERSITY SYLLABUS,ANNA-UNIVERSITY RESULTS,ANNA UNIVERSITY DISTANCE EDUCATION,ANNA UNIVERSITY MBA-CENTRE FOR DISTANCE EDUCATION,ANNA UNIVERSITY SCHEDULE OF EXAMINATIONS,ANNA UNIVERSITY ADMISSION,ANNA UNIVERSITY COURSES,ANNA UNIVERSITY ACADEMIC,ANNA UNIVERSITY DEPARTMENTS,ANNA UNIVERSITY RESEARCH,ANNA UNIVERSITY MAIL,ANNA UNIVERSITY QUESTION PAPERS,ANNA UNIVERSITY COUNSELLING DATES,ANNA UNIVERSITY RE-EVALUATION RESULTS